METHOD FOR FORMING TRANSISTOR OF SEMICONDUCTOR DEVICE

摘要

A method for forming a transistor of a semiconductor device is provided to improve a current driving force by preventing a leakage current of a gate and a gate contact resistance. A trench for a recess gate is formed in an active area of a semiconductor substrate(11). The semiconductor substrate includes an element isolation region. A gate pattern is formed in an upper part of a trench for the recess gate. A spacer is formed in the side wall of the gate pattern. An interlayer insulating layer(27) is formed on an upper part of the substrate including the gate pattern. The interlayer insulating layer includes a contact hole. The contact hole exposes an expected source/drain region. A nickel layer(33) is deposited on the expected source/drain region of the bottom of the contact hole. The contract hole is reclaimed to a poly layer. An elevated source/drain region is formed in an interface between the poly layer and the semiconductor substrate with the expected source/drain region through an annealing process. The elevated source/drain region is composed of the nickel silicide layer.