发明名称 |
METHOD FOR MANUFACTURING HIGH EFFICIENCY PHOTOVOLTAIC DEVICES AT ENHANCED DEPOSITION RATES |
摘要 |
<p>A P-I-N type photovoltaic device is manufactured by a process wherein the deposition rate of the intrinsic layer is controlled so that a portion of the intrinsic layer which is closest to the P-I interface, and which comprises at least 10% of the thickness of the intrinsic layer, is deposited at a rate which is less than the average rate at which the entire intrinsic layer is deposited.</p> |
申请公布号 |
EP1292993(A4) |
申请公布日期 |
2009.02.25 |
申请号 |
EP20010937403 |
申请日期 |
2001.05.16 |
申请人 |
UNITED SOLAR SYSTEMS CORPORATION |
发明人 |
GUHA, SUBHENDU;YANG, CHI, C.;LORD, KENNETH |
分类号 |
H01L21/00;H01L31/075;H01L31/18;(IPC1-7):H01L31/18;H01L31/06 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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