发明名称 ORGANIC THIN FILM TRANSISTOR
摘要 <p>An organic thin film transistor is provided to obtain electrical protection by stabilizing the potential inside an active layer of the transistor by an electromagnetic shield effect. An organic thin film transistor includes a substrate(10), a gate electrode(12) arranged on the substrate, and a gate insulating layer(14) arranged on the gate electrode. A source electrode(16) and a drain electrode(18) are arranged on the gate insulating layer. The organic semiconductor layer is interposed between the source electrode and the drain electrode and is arranged in the upper part of the gate insulating layer. A hole transport layer(22) is arranged on the organic semiconductor layer. An electron-transport layer(24) is arranged on the hole-transport layer. A conductive layer(26) is arranged on the electron-transport layer.</p>
申请公布号 KR20090019715(A) 申请公布日期 2009.02.25
申请号 KR20080080903 申请日期 2008.08.19
申请人 ROHM CO., LTD. 发明人 OKUYAMA SUGURU;OKU YOSHIAKI;SHIMOJI NORIYUKI
分类号 H01L29/786;H01L51/00 主分类号 H01L29/786
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