NITRIDE SEMICONDUCTOR DEVICE HAVING SUPPER LATTICE STURCUTRE ACTIVE LAYER

摘要

A nitride compound semiconductor including an active layer with a supper lattice structure is provided to secure uniform light emission in the whole active region by improving the reduction of an effective active region due to the lowering of the local carrier injection efficiency. A nitride compound semiconductor device(10) includes a first conductive nitride semiconductor layer(12), an active layer(15) of a super lattice structure, and a second conductive nitride semiconductor layer(17). An active layer is positioned between first and second conductive nitride semiconductor layers. A plurality of quantum-well layers(15a) and a plurality of quantum barrier layer(15b) are alternatively stacked in the active layer. The thickness of the quantum barrier layer is 0.7 to 2.5 times thicker than the quantum-well layer. The carrier injected from the quantum-well layer is tunneled to the adjacent quantum well layer. The thickness of the quantum well layer is 10 to 100 angstrom.