| 摘要 |
A semiconductor device and a manufacturing method thereof are provided to obtain insulating property between wirings by increasing an interval between wirings by thinning the width of the wiring in the uppermost part of a resin protrusion. A semiconductor device includes a semiconductor substrate(10) with an integrated circuit(12), and a plurality of electrodes(14) which are formed in the semiconductor substrate and are electrically connected to the integrated circuit. A passivation film(16) is formed on the semiconductor substrate. An opening exposes at least part of the plurality of electrodes. A resin protrusion(18) is protruded from the upper part of the passivation film. A plurality of wirings are extended from the plurality of electrodes to the resin protrusion with a constant interval. The width of a part on the uppermost part of the resin protrusion is thinner than the part from one electrode to the front part of the uppermost part. |
