Switching element, method of manufacturing the switching element, and memory element array

摘要

Disclosed is a switching element including: an insulative substrate (10); a first electrode (20) and a second electrode (40) provided to the insulative substrate; an interelectrode gap (50) between the first electrode and the second electrode, comprising a gap of a nanometer order which causes switching phenomenon of resistance by applying a predetermined voltage between the first electrode and the second electrode; and a sealing member (60) to seal the interelectrode gap such that the gap is retained.