发明名称 PROCESS CHAMBER FOR DIELECTRIC GAPFILL
摘要 A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may also include a precursor distribution system comprising a dual-channel showerhead positioned above the substrate stage. The showerhead may have a faceplate with a first set of openings through which the reactive radical precursor enters the deposition chamber, and a second set of openings through which a second dielectric precursor enters the deposition chamber. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber.
申请公布号 KR20090019866(A) 申请公布日期 2009.02.25
申请号 KR20087031821 申请日期 2007.05.30
申请人 APPLIED MATERIALS INC. 发明人 LUBOMIRSKY DMITRY;LIANG. QIWEI;PARK SOONAM;CHUC KIEN N.;YIEH ELLIE
分类号 H01L21/205;C23C16/22;C23C16/30;H01L21/76 主分类号 H01L21/205
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