| 摘要 |
A nitride semiconductor light emitting device and a manufacturing method thereof are provided to improve optical extraction efficiency by forming a pattern of protrusion and groove on a substrate. A nitride semiconductor layer is positioned on a substrate(100), and includes a first conductive layer, an active layer, and a second conductive layer. A first electrode is formed on the first conductive layer. A second electrode is formed on the second conductive layer. A pattern(200) of a protrusion(210) and a groove(220) is formed on the substrate. The protrusion is formed with a fixed interval. The groove is formed on a top surface of the protrusion. The protrusion and the groove have curvature shape.
|
