| 发明名称 |
Resistive memory devices including selected reference memory cells |
| 摘要 |
A Resistance based Random Access Memory (ReRAM) can include a current reference circuit including at least three ReRAM reference cells coupled in parallel with one another and configured to provide a reference current to respective ReRAM sense amplifier circuits.
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| 申请公布号 |
US7495984(B2) |
申请公布日期 |
2009.02.24 |
| 申请号 |
US20060527271 |
申请日期 |
2006.09.26 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM HYUN-JO;NAM KYUNG-TAE;BAEK IN-GYU;OH SE-CHUNG;LEE JANG-EUN;JEONG JUN-HO |
| 分类号 |
G11C7/02 |
主分类号 |
G11C7/02 |
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