发明名称 Reading phase change memories
摘要 A read current high enough to threshold a phase change memory element may be used to read the element without thresholding the memory element. The higher current may improve performance in some cases. The memory element does not threshold because the element is read and the current stopped prior to triggering the memory element.
申请公布号 US7495944(B2) 申请公布日期 2009.02.24
申请号 US20050093878 申请日期 2005.03.30
申请人 OVONYX, INC. 发明人 PARKINSON WARD D.;CASAGRANDE GIULIO;RESTA CLAUDIO;GASTALDI ROBERTO;BEDESCHI FERDINANDO
分类号 G11C11/00 主分类号 G11C11/00
代理机构 代理人
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