发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 A semiconductor device is provided to perform a driving operation by controlling driving force of a reference voltage in a test mode operation and it can operate. A semiconductor device includes a reference voltage generation unit(200), a voltage driving unit(220), a pad(240), and an internal voltage generation unit. The reference voltage generation unit generates a first regular voltage(VREF1). The voltage driving unit changes driving force according to a test signal. The pad is formed to apply a second reference voltage(VREF2) to an output node. The internal voltage generation unit generates a plurality of internal voltages on the basis of the level of the voltage applied to the output node.
申请公布号 KR100885488(B1) 申请公布日期 2009.02.24
申请号 KR20070081686 申请日期 2007.08.14
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, JONG SAM
分类号 G11C5/14;G11C29/00 主分类号 G11C5/14
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