发明名称 Power transistor circuit and the method thereof
摘要 The power transistor circuit with high-voltage endurance includes a first power transistor, a second power transistor and an enabling circuit. The first power transistor includes a first voltage endurance and a first inner resistance, while the second power transistor includes a second voltage endurance and a second inner resistance. The first voltage endurance and the first inner resistance are smaller than the second voltage endurance and the second inner resistance, respectively. The drain of the second power transistor is connected to the drain of the first power transistor and the enabling circuit. The enabling circuit enables the second power transistor first, and when the drain voltage of the first power transistor is smaller than the first endurance, the enabling circuit then enables the first power transistor.
申请公布号 US7495499(B2) 申请公布日期 2009.02.24
申请号 US20070783556 申请日期 2007.04.10
申请人 ADVANCED ANALOG TECHNOLOGY, INC. 发明人 CHUNG CHIEN CHUAN;CHU CHU YU;SUN YU MIN
分类号 H03K17/687 主分类号 H03K17/687
代理机构 代理人
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