发明名称 |
Group III nitride semiconductor light-emitting device and method of producing the same |
摘要 |
A Group III nitride semiconductor light-emitting device includes a stacked structure 11 formed on a crystal substrate (100) to be removed from it and including two Group III nitride semiconductor layers 104 and 106 having different electric conductive types and a light-emitting layer 105 which is stacked between the two Group III nitride semiconductor layers and which includes a Group III nitride semiconductor, and a plate body 111made of material different from that of the crystal substrate and formed on a surface of an uppermost layer which is opposite from the crystal substrate that is removed from the stacked structure.
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申请公布号 |
US7495261(B2) |
申请公布日期 |
2009.02.24 |
申请号 |
US20050593080 |
申请日期 |
2005.03.17 |
申请人 |
SHOWA DENKO K.K. |
发明人 |
KUSUNOKI KATSUKI;MITANI KAZUHIRO;UDAGAWA TAKASHI |
分类号 |
H01L29/22;H01L29/221;H01L29/225;H01L33/06;H01L33/10;H01L33/32;H01L33/34;H01L33/40;H01L33/46;H01L33/56;H01L33/62 |
主分类号 |
H01L29/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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