发明名称 |
Semiconductor memory devices and methods for forming the same |
摘要 |
A semiconductor memory device can include select transistors and cell transistors on a semiconductor substrate. An insulation layer covers the select transistors and the cell transistors. The bit lines are in the insulation layer and are electrically connected to respective ones of the select transistors. The bit lines are arranged along at least two different parallel planes having different heights relative to the semiconductor substrate.
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申请公布号 |
US7494871(B2) |
申请公布日期 |
2009.02.24 |
申请号 |
US20060647671 |
申请日期 |
2006.12.29 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE CHANG-SUB;CHOI JEONG-HYUK;LEE WOON-KYUNG;SONG JAI-HYUK;OH DONG-YEAN |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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