发明名称 Method of reducing process steps in metal line protective structure formation
摘要 A method of forming a protective structure on a top metal line on an interconnect structure is disclosed. The method includes providing a plate opening in the passivation layer on the top metal line and forming a protective plate in the plate opening on the top metal line.
申请公布号 US7495335(B2) 申请公布日期 2009.02.24
申请号 US20050131111 申请日期 2005.05.16
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 KUO I-LING
分类号 H01L23/48 主分类号 H01L23/48
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