发明名称 |
Methods of forming NAND memory with virtual channel |
摘要 |
A string of nonvolatile memory cells are connected together by source/drain regions that include an inversion layer created by fixed charge in an overlying layer. Control gates extend between floating gates so that two control gates couple to a floating gate. A fixed charge layer may be formed by plasma nitridation.
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申请公布号 |
US7494870(B2) |
申请公布日期 |
2009.02.24 |
申请号 |
US20070626784 |
申请日期 |
2007.01.24 |
申请人 |
SANDISK CORPORATION |
发明人 |
CHIEN HENRY;MATAMIS GEORGE;ORIMOTO TAKASHI;KAI JAMES |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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