发明名称 |
Manufacturing a semiconductive device using a controlled atomic layer removal process |
摘要 |
A method for manufacturing a semiconductive device comprising forming a mask for a semiconductive device structure over a layer of a semiconductor substrate and partially etching the layer to form lateral and vertical surfaces. Thicknesses of one to several atomic diameters of atoms that comprise said layer are removed from the lateral surfaces and the vertical surfaces that are located under the mask to form a target dimension of a semiconductive device structure.
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申请公布号 |
US7494882(B2) |
申请公布日期 |
2009.02.24 |
申请号 |
US20060373662 |
申请日期 |
2006.03.10 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
VITALE STEVEN ARTHUR |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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