发明名称 |
Circuit configuration and method to reduce ringing in the semiconductor power switching circuits |
摘要 |
A switching device includes a high-side MOSFET chip having a first high-side source connected to a low-side drain of a low-side MOSFET chip. The switching device further includes a transient reverse current diversion circuit connected to a drain of the low side MOSFET chip for diverting a reverse transient current therethrough whereby a reverse transient current in turning off the low side MOSFET chip is diverted from passing through a body diode of the low side MOSFET chip reducing a transient ringing oscillation. The reverse transient current diversion circuit includes a diode for conducting the reverse transient current from the drain. The reverse transient current diversion circuit further includes a capacitor connected between the diode and a source of the low side MOSFET chip.
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申请公布号 |
US7495877(B2) |
申请公布日期 |
2009.02.24 |
申请号 |
US20060390391 |
申请日期 |
2006.03.26 |
申请人 |
ALPHA & OMEGA SEMICONDUCTOR, LTD. |
发明人 |
HAVANUR SANJAY |
分类号 |
H02H3/22;H01C7/12;H02H3/20 |
主分类号 |
H02H3/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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