发明名称 |
Circuit and method for controlling write recovery time in semiconductor memory device |
摘要 |
A circuit and a method for controlling a write recovery time (tWR) in a semiconductor memory device are disclosed. The method according to one embodiment of the present invention includes receiving an automatic precharge write command, and generating a tWR control signal, which is delayed from a point in time when the automatic precharge write command is received to a point in time when a last data segment is written in the semiconductor memory device. Therefore, power consumption and clock noise may be reduced since an operation of a counter in the circuit for controlling the tWR may be minimized after a point in time when the last data is written.
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申请公布号 |
US7495973(B2) |
申请公布日期 |
2009.02.24 |
申请号 |
US20070625597 |
申请日期 |
2007.01.22 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JUNG HAN-GYUN;KO SEUNG-BUM |
分类号 |
G11C7/00 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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