| 摘要 |
<p>A semiconductor device and a manufacturing method thereof are provided to prevent pattern error due to mask misalign by forming a floating gate electrode into self align mode using a device isolation pattern without mask process and polishing process. A device isolation pattern(105) is formed on a semiconductor substrate(100). A first poly silicone layer is formed on a front surface of the semiconductor substrate including the device isolation pattern. A floating gate electrode(107) is formed between the device isolation patterns by etching the first poly silicone layer. An insulating film covers the floating gate electrode. A second poly silicone layer is formed on the insulating film. A control gate electrode(115) and an insulating pattern(109) are formed by patterning the second poly silicone layer and the insulating film.</p> |
