| 摘要 |
A CMOS image sensor and a method manufacturing thereof are provided to prevent a planarization layer from being dissolved due to chemical material in a wet process by forming a protective layer on the planarization layer by a plasma process before forming the micro lens on the polarization layer. A photodiode(203) is formed on a semiconductor substrate(201). A plurality of color filter layer(206) is formed to correspond to the photodiode region with a constant interval. A planarization layer is formed in the front side of each color filter layer. A protective layer(210A) is formed in the front side of the planarization layer. A micro lens corresponding to each photo diode region is formed by depositing and patterning an oxidation film in the front side of the protective layer.
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