| 摘要 |
<p>A reflective type mask and a method for fabricating the same are provided to confirm a dimension of a pattern on a wafer with the dimension of the absorbing layer pattern in an EUV(Extreme Ultra Violet) exposure process by maintaining the trapezoidal shape to prevent a shadow effect. A reflective type mask includes a substrate(21), a reflecting layer(22) formed in the substrate, and an absorbing layer pattern(25) formed on the reflecting layer. The EUV(Extreme Ultra Violet) light is reflected by the reflecting layer and is absorbed by the absorbing layer pattern. Each side wall of the absorbing layer pattern is formed with the step type. An incline angle between each side wall of the absorbing layer pattern and the reflective layer is equal to the incident angle or the reflective angle of the EUV light.</p> |
