Memory Devices Having Resistance Property Capable Of Being Independently Controlled By Electric And Magnetic Fields And Methods Of Operating The Same

摘要

The memory has memory cells (MC) on a substrate, and a controller (119) electrically coupled with the memory cells. The controller applies magnetic fields (Hx, Hy) at the cells for programming magneto-resistance loaded conditions of the cells. The controller applies electrical signals (Isw) through the cells for programming resistance conditions of the cells to program the cells with two bits of data. The controller applies an electrical signal at the cells for differentiating four different memory states from each other and reading the two bits of data from the cells. An independent claim is also included for a method for operating a memory.