METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

摘要

A semiconductor device and a method for manufacturing the same are provided to reduce a resistance value between an internal connection terminal and a wiring pattern. A semiconductor substrate(31) is provided. A plurality of semiconductor chips(11) are formed on the semiconductor substrate. The semiconductor chip has an electrode pad(23). The internal connection terminal(12) is formed on the electrode pad. An insulating layer(13) is formed on the plurality of semiconductor chips to cover the internal connection terminal. The metal layer is formed on the insulating layer. A plane presses the whole area of the metal layer. The metal layer contacts an upper part(12-1) of the internal connection terminal. A protrusion part of a press tool presses the metal layer contacting the upper part of the internal connection terminal. A first curve part(12-1A) is formed in the internal connection terminal. A second curve part(14B) is formed in the metal layer. The metal layer is etched. Wiring patterns(14,15) are formed.