METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND STORAGE MEDIUM

摘要

A method for manufacturing a semiconductor device and a storage medium are provided to form a concave part with high vertical profile in an organic film by suppressing the isotropic etching due to an oxygen active species. A silicon containing layer(53) is etched by the plasma. A pattern of a pattern mask(56) is transferred to the silicon containing layer. The pattern mask is removed by the plasma. The surface of the silicon containing layer is exposed. A surface of an organic film(52) is etched by an oxygen active species through the pattern of the silicon containing layer. A concave part(57a) is formed in the organic film. The depth of the concave part is smaller than the thickness of the organic film. The silicon containing layer is sputtered. A silicon containing protection layer(64) is formed in an inner wall of the concave part. The concave part is etched by the oxygen active species of the plasma through the silicon containing layer in a depth direction. A hole or groove is formed in the organic layer.