发明名称 |
STRUCTURE AND METHOD FOR FORMING A SHIELDED GATE TRENCH FET WITH THE SHIELD AND GATE ELECTRODES BEING CONNECTED TOGETHER |
摘要 |
<p>A field effect transistor (FET) includes a plurality of trenches extending into a semiconductor region. Each trench includes a gate electrode and a shield electrode with an inter-electrode dielectric therebetween, wherein the shield electrode and the gate electrode are electrically connected together.</p> |
申请公布号 |
KR20090018638(A) |
申请公布日期 |
2009.02.20 |
申请号 |
KR20087030499 |
申请日期 |
2007.05.21 |
申请人 |
FAIRCHILD SEMICONDUCTOR CORPORATION |
发明人 |
KRAFT NATHAN;KOCON CHRISTOPHER BOGUSLAW;THORUP PAUL |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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