| 摘要 |
<p>A plasma CVD(Chemical Vapor Deposition) apparatus, a method for manufacturing a microcrystalline semiconductor, and a method for manufacturing a thin film transistor are provided to uniformize the plasma by applying a high frequency power with different frequency to an electrode of the plasma CVD apparatus. A plasma CVD apparatus includes a reaction chamber(100), an electrode(101), a first high frequency power source(104) and a second high frequency power source(105). The electrode is arranged inside the reaction chamber. The first high frequency power source applies a first AC power to the electrode. The first AC power has the frequency corresponding to a wavelength more than 10 m. The second high frequency power source applies the second AC power to the electrode. The second AC power source has the frequency corresponding to the wavelength less than 10 m. The glow discharge plasma is generated by applying the outputs from the first high frequency power source and the second high frequency power source to the electrode. The electrode has an approximate rectangular shape. The length of at least one side of the electrode is above 2000mm.</p> |
