发明名称 Novel manufacturing design and processing methods and apparatus for sputtering targets
摘要 Sputtering targets having a reduced burn-in time are described herein, where the target comprises an atmospheric plasma-treated surface material having at least about 10% reduced residual surface damage as compared to the residual surface damage of the surface material prior to atmospheric plasma treatment. Sputtering targets having reduced burn-in times are also described herein that include: a) an atmospheric plasma-finished surface material having an average grain size, and b) a core material having an average grain size, wherein the atmospheric plasma-finished surface material has an average surface roughness (Ra) equal to or less than about the average grain size of at least one of the surface material or the core material. An apparatus for producing sputtering targets having a reduced burn-in time, a reduced surface contamination or a combination of both has been developed that comprises an enclosure having a volume of air, an atmospheric plasma source positioned at least in part in the enclosure, a sputtering target positioned substantially inside the enclosure and at least one analytical instrument for measuring the constituent components in the volume of air, wherein at least part of the analytical instrument in located in the enclosure. Methods of producing sputtering targets having reduced burn-in times include: providing a surface material having at least some residual surface damage, providing an atmospheric plasmatron, forming an atmospheric plasma utilizing the atmospheric plasmatron, scanning at least part of the surface material with the atmospheric plasma in order to reduce the surface damage by at least about 10%.
申请公布号 US2009045044(A1) 申请公布日期 2009.02.19
申请号 US20070837677 申请日期 2007.08.13
申请人 AKINS JARED;WU CHI TSE 发明人 AKINS JARED;WU CHI TSE
分类号 C23C14/00;C23C14/34 主分类号 C23C14/00
代理机构 代理人
主权项
地址