| 摘要 |
A silicon solar cell and manufacturing method thereof are provided to form the good ohmic contact between the emitter layer and the front electrode having the impurity of low concentration and to prevent the deterioration of contact between the emitter layer and the front electrode. The impurity of the first conductivity type is doped in the silicon semiconductor wafer(201). The emitter layer(202) doped with the impurity of second conductive type having opposite polarity of the first conductivity type is formed on the substrate. The micro silicon crystal layer(203) in which the impurity of the second conductive type is doped with the high concentration is formed on the emitter layer. The anti-reflective layer(204) is formed on the micro silicon crystal layer. The front electrode(205) is connected to the micro silicon crystal layer through the anti-reflective layer. The rear electrode(206) is connected to the rear side of substrate. |
