| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an AlInGaN-based electronic or optoelectronic device which dispenses with the use of spacer layers and has a low dislocation density. <P>SOLUTION: An AlInGaN alloy layer 3 is deposited on a nitride substrate 2 by epitaxial growth and is removed from the nitride substrate 2 on which it has been grown. A resulting electronic or optoelectronic device structure is a substrate having a high epitaxial layer quality and a low dislocation density. <P>COPYRIGHT: (C)2009,JPO&INPIT |
