发明名称 COPPER FILM PRODUCTION METHOD, AND SPUTTERING DEVICE USED FOR THE METHOD
摘要 PROBLEM TO BE SOLVED: To provide a copper thin film having low specific resistance regarding a technical field where a target made of copper or essentially consisting of copper is sputtered, so as to form a copper thin film. SOLUTION: When a substrate 15 is arranged at the inside of a sputtering system 1, and a copper target 21 is sputtered, a trace amount of air from piping 31 for gas addition is introduced and is added to a sputtering gas. When a copper thin film formed on the surface of the substrate 15 is left in the air, its specific resistance reduces, and is made close to the value of bulk copper. It is effective that the partial pressure of the air to be introduced is controlled to≤1.33×10<SP>-4</SP>Pa. For reducing the partial pressure value, preferably, the air is intermittently introduced. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009035824(A) 申请公布日期 2009.02.19
申请号 JP20080281839 申请日期 2008.10.31
申请人 ULVAC JAPAN LTD 发明人 KOMATSU TAKASHI;NAKAMURA SATOSHI;TAGUMA YASUHIRO;UEHIGASHI TOSHIMITSU;HIGUCHI YASUSHI
分类号 C23C14/34;H01L21/28;H01L21/285 主分类号 C23C14/34
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