| 发明名称 |
Diode structure and memory device including the same |
| 摘要 |
Provided are a diode structure and a memory device including the same. The diode structure includes: a first electrode; a p-type Cu oxide layer formed on the first electrode; an n-type InZn oxide layer formed on the p-type Cu oxide layer; and a second electrode formed on the n-type InZn oxide.
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| 申请公布号 |
US2009045429(A1) |
申请公布日期 |
2009.02.19 |
| 申请号 |
US20080076311 |
申请日期 |
2008.03.17 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG BO-SOO;GENRIKH STEFANOVICH;PARK YOUNG-SOO;LEE MYOUNG-JAE;AHN SEUNG-EON;LEE CHANG-BUM |
| 分类号 |
H01L33/00;H01L29/00 |
主分类号 |
H01L33/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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