发明名称 BUFFER CONTROL CIRCUIT FOR MEMORY DEVICE
摘要 A buffer control circuit of a memory device is provided to minimize consumption of DRAM operation current by controlling efficiently a buffer in an auto refresh operation. A buffer control circuit of a memory device includes an auto refresh buffer control unit(20), a clock control unit(50), a command clock control unit(30), and a data input/output buffer control unit(40). The refresh buffer control unit senses a data training state in an auto refresh operation process. The clock control unit generates a clock signal(clkrp/clkfp) to be used for reading/writing data. The command clock control unit generates a clock signal to be used for a command control. The data input/output buffer control unit controls a data input/output buffer in an enable state.
申请公布号 KR100884609(B1) 申请公布日期 2009.02.19
申请号 KR20070092555 申请日期 2007.09.12
申请人 HYNIX SEMICONDUCTOR INC. 发明人 YANG, SUN SUK;KWEAN, KI CHANG
分类号 G11C11/4093;G11C11/402;G11C11/403 主分类号 G11C11/4093
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