发明名称 |
BUFFER CONTROL CIRCUIT FOR MEMORY DEVICE |
摘要 |
A buffer control circuit of a memory device is provided to minimize consumption of DRAM operation current by controlling efficiently a buffer in an auto refresh operation. A buffer control circuit of a memory device includes an auto refresh buffer control unit(20), a clock control unit(50), a command clock control unit(30), and a data input/output buffer control unit(40). The refresh buffer control unit senses a data training state in an auto refresh operation process. The clock control unit generates a clock signal(clkrp/clkfp) to be used for reading/writing data. The command clock control unit generates a clock signal to be used for a command control. The data input/output buffer control unit controls a data input/output buffer in an enable state.
|
申请公布号 |
KR100884609(B1) |
申请公布日期 |
2009.02.19 |
申请号 |
KR20070092555 |
申请日期 |
2007.09.12 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
YANG, SUN SUK;KWEAN, KI CHANG |
分类号 |
G11C11/4093;G11C11/402;G11C11/403 |
主分类号 |
G11C11/4093 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|