METHOD FOR FABRICATING PROBE CARD ASSEMBLY

摘要

A method for fabricating the probe card assembly is provided to simplify the process and reduce the whole process step by applying the back side IPC process to the bonding step of the lower plate and the formation of the probe structure by using silicon junction wafer. The first and the second silicon wafer(38) are bonded. The selective etching process is performed on the first and the second silicon wafer to form the tip formation region. The probe structure (34) is formed by forming metal in the region including tip formation region. The backside of the wafer having the probe structure is selectively etched and then the tip portion of the probe structure is exposed. The junction part of the probe beam of the probe structure is bonded with the probe structure junction (39a) of the lower substrate. The probe structure boned into the lower substrate is left and the total wafer is removed.