摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is equipped with a protective diode to protect a semiconductor element such as MOSFET from insulation breakdown, suppress a leakage current which may be caused on the protective diode at the time of low voltage, and can supply a greater amount of current when high voltage is applied, such as in the case of coming of surge. SOLUTION: A grain size of polycrystalline semiconductor is made larger than that of the conventional semiconductors by forming a protective diode with a polycrystalline semiconductor which is obtained by crystallizing an amorphous semiconductor by thermal processing. This improves characteristics of the protective diode, makes it easier to have a thinner gate insulating film in an insulating gate type semiconductor and attain miniaturization (reduction in input capacity) of chip size. COPYRIGHT: (C)2009,JPO&INPIT
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