| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a compound semiconductor optical device which can decrease residues in removing a dielectric mask. SOLUTION: The method of manufacturing a compound semiconductor optical device includes (a) a step of depositing a dielectric mask film 17, which is composed of silicon compound, over a compound semiconductor region 10 heating a substrate 11 using a heater, applying an inductively-coupled-plasma chemical-vapor-deposition process supplying a film-forming gas containing an organosilane-based raw material and an oxygen raw material, (b) a step of patterning the dielectric mask film 17 to form a dielectric mask 17a, and (c) a step of dry-etching the compound semiconductor region 10 through the use of the dielectric mask 17a to form a mesa-shaped compound semiconductor region 10c. The deposition of the dielectric mask film 17 is made at substrate temperature of 200 degrees C or above. The deposition of the dielectric mask film 17 is made at temperature of 300 degrees C or below. COPYRIGHT: (C)2009,JPO&INPIT
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