| 摘要 |
PROBLEM TO BE SOLVED: To provide a forming method of a pattern in which pattern formation having a suitable aspect ratio can be performed without depending upon the relation between a pattern width and the remaining film thickness of a ground. SOLUTION: The forming method of the pattern includes: a process of forming a resin layer to which an imprint pattern based upon unevenness of a mold is transferred on a substrate; an inversion layer forming process of forming an inversion layer on the resin layer; a removing process of removing a portion of the inversion layer to expose the resin layer in a state that the inversion layer is buried in recessed portions of the resin layer; and an etching process of etching the resin layer by using the inversion layers buried in the recessed portions as a mask to form an inversion pattern. A series of the processes from the inversion layer forming process to the etching process is repeated (n) times (n: a natural number of≥2), and in an (n)th etching process, the resin layer left between recessed portions of the inversion pattern and the substrate in an (n-1)th etching process is removed to form penetrated portions reaching the surface of the substrate in the resin layer. COPYRIGHT: (C)2009,JPO&INPIT
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