| 摘要 |
<p>A semiconductor chip, method of fabricating the same and stacked package having the same are provided to emit the heat generated in the dip via to outside by arranging heat sink member in a regular interval to the dip via included in the semiconductor chip. The insulating layer is formed on the silicon wafer(110) to cover the semiconductor device(120). The dip via(162) is formed through the wafer and the insulating layer. The heat sink(180) for emitting the heat generated in the dip via is separated from the dip via. The heat sink is comprised of a plurality of vias. A plurality of vias is interconnected with the heat transfer member(190). The buffer layer(135) surrounds the dip via. The buffer layer includes at least one of the tetraethyl ester silicate, and the silicon nitride and silicon carbide.</p> |
