NONVOLATILE MEMORY DEVICE INCLUDING GATE CONDUCTIVE LAYER HAVING PEROVSKITE STRUCTURE AND METHOD OF FABRICATING THE SAME

摘要

A non-volatile memory device having the gate conductive film of perovskite structure is provided to improve the program speed and erasing speed by blocking the insulation film having the perovskite structure of the high-K. The tunneling insulating layer(331) is arranged on the substrate(300). The charge storage layer(333) is arranged on the tunneling insulating layer. The blocking insulation film(335) is arranged on the charge storage layer. The blocking insulation film has the perovskite structure. The gate conductive film(341) is arranged on the blocking insulation film. The gate conductive film has the perovskite structure.