| 摘要 |
An image sensor and a manufacturing method thereof are provided to improve a dark current characteristic by forming an element isolation region with ion implantation of impurity. An interlayer dielectric layer(160) is formed on a first substrate(100) including a readout circuit(120). A wiring(150) is formed in a unit pixel in order to be connected to the readout circuit by penetrating through the interlayer dielectric layer. A crystalline semiconductor(200) is formed on the interlayer dielectric layer. The photo diode(230) is electrically connected to the wiring. The element isolation region is formed inside the crystalline semiconductor layer to isolate a photodiode in the unit pixel. The element isolation region is made of the conductive impurity. The readout circuit includes an electric junction region(140) and a floating diffusion region(147) positioned in the transistor and both sides of the transistor. The voltage of the electric junction region is higher than the floating diffusion region.
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