| 摘要 |
PROBLEM TO BE SOLVED: To provide a detecting method for a crystalline defect with high measurement sensitivity in which even a microdefect such as a small BMD formed nearby a wafer surface after a low-temperature process as an advanced device process can be measured. SOLUTION: For the detecting method of the crystalline defect by an infrared scattering tomography method, a silicon single crystal wafer used for measurement and another silicon single crystal wafer different from the silicon single crystal wafer are prepared, the two silicon single crystal wafers are put one over the other, and liquid having the same refractive index with the silicon single crystal wafers is interposed between the two silicon single crystal wafers which are put one over the other; and an infrared laser beam is made incident on the opposite surface from the surface where the silicon wafer single crystal wafer prepared in addition to the wafer for measurement to detect a crystalline defect of the silicon single crystal wafer for measurement. COPYRIGHT: (C)2009,JPO&INPIT
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