发明名称 |
METHOD FOR SELECTIVELY FORMING SYMMETRICAL OR ASYMMETRICAL FEATURES USING A SYMMETRICAL PHOTOMASK DURING FABRICATION OF A SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEMS INCLUDING THE SEMICONDUCTOR DEVICE |
摘要 |
A method for patterning a material during fabrication of a semiconductor device provides for the selective formation of either asymmetrical features or symmetrical features using a symmetrical photomask, depending on which process flow is chosen. The resulting features which are fabricated use spacers formed around a patterned material. If one particular etch is used to remove a base material, symmetrical features result. If two particular etches are used to remove the base material, asymmetrical features remain. |
申请公布号 |
WO2009002389(A3) |
申请公布日期 |
2009.02.19 |
申请号 |
WO2008US06884 |
申请日期 |
2008.05.30 |
申请人 |
MICRON TECHNOLOGY, INC.;ZHU, HONGBIN;MADSEN, JEREMY |
发明人 |
ZHU, HONGBIN;MADSEN, JEREMY |
分类号 |
H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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