| 摘要 |
A synthetic antiferromagnet (SAF) structure includes a bottom ferromagnetic layer, a coupling layer formed over the bottom ferromagnetic layer, and a top ferromagnetic layer formed over the coupling layer. One of the top and bottom ferromagnetic layers comprises an amorphous alloy characterized by (Co100-aFea)100-zBz, where a is less than approximately 10 atomic percent, and z is greater than approximately 20 atomic percent. In general, a magnetic device includes at least one magnetic layer comprising an amorphous CoFeB alloy characterized by (Co100-aFea)100-zBz, where a is less than approximately 10 atomic percent, and z is greater than approximately 20 atomic percent.
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