发明名称 |
Photonic Crystal Light Emitting Device |
摘要 |
A photonic crystal structure is formed in an n-type region of a III-nitride semiconductor structure including an active region sandwiched between an n-type region and a p-type region. A reflector is formed on a surface of the p-type region opposite the active region. In some embodiments, the growth substrate on which the n-type region, active region, and p-type region are grown is removed, in order to facilitate forming the photonic crystal in an n-type region of the device, and to facilitate forming the reflector on a surface of the p-type region underlying the photonic crystal. The photonic crystal and reflector form a resonant cavity, which may allow control of light emitted by the active region. |
申请公布号 |
US2009045427(A1) |
申请公布日期 |
2009.02.19 |
申请号 |
US20080259120 |
申请日期 |
2008.10.27 |
申请人 |
PHILIPS LUMILEDS LIGHTING COMPANY, LLC;KONINKLIJKE PHILIPS ELECTRONICS N.V |
发明人 |
WIERER, JR. JONATHAN J.;KRAMES MICHAEL R.;EPLER JOHN E. |
分类号 |
H01L33/00;H01L33/10;H01L33/20;H01L33/38;H01L33/62 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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