发明名称 PHOTOSENSITIVE SEMICONDUCTOR COMPONENT
摘要 The invention relates to a semiconductor component (1) comprising a photosensitive doped semiconductor layer (2), in which electric charge carriers are released during the absorption of electromagnetic radiation (6). The photosensitive semiconductor layer (2) has a structured boundary layer (7). The structured boundary layer (7) is positioned after at least one layer (3) that generates an electric field for separating the released charge carriers, said electric field extending over the structured boundary surface (7). The photosensitive semiconductor component (1) is characterised by a highly efficient charge carrier separation, in particular for generating an electric current.
申请公布号 WO2008145097(A3) 申请公布日期 2009.02.19
申请号 WO2008DE00870 申请日期 2008.05.21
申请人 FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V.;FRIEDRICH-SCHILLER-UNIVERSITAET JENA;FUECHSEL, KEVIN;TUENNERMANN, ANDREAS;KLEY, ERNST-BERNHARD 发明人 FUECHSEL, KEVIN;TUENNERMANN, ANDREAS;KLEY, ERNST-BERNHARD
分类号 H01L31/0352;H01L31/0236 主分类号 H01L31/0352
代理机构 代理人
主权项
地址