The invention relates to a semiconductor component (1) comprising a photosensitive doped semiconductor layer (2), in which electric charge carriers are released during the absorption of electromagnetic radiation (6). The photosensitive semiconductor layer (2) has a structured boundary layer (7). The structured boundary layer (7) is positioned after at least one layer (3) that generates an electric field for separating the released charge carriers, said electric field extending over the structured boundary surface (7). The photosensitive semiconductor component (1) is characterised by a highly efficient charge carrier separation, in particular for generating an electric current.
申请公布号
WO2008145097(A3)
申请公布日期
2009.02.19
申请号
WO2008DE00870
申请日期
2008.05.21
申请人
FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V.;FRIEDRICH-SCHILLER-UNIVERSITAET JENA;FUECHSEL, KEVIN;TUENNERMANN, ANDREAS;KLEY, ERNST-BERNHARD