METHODOLOGY FOR REDUCING POST BURN-IN VMIN DRIFT

摘要

A semiconductor device includes source/drain regions formed in a substrate (110) and having a concentration of nitrogen of at least about 5El 8 cm"3. A gate dielectric (120) is located over the substrate and between the source/drain regions. Gate sidewall spacers are located over said source/drain regions (140). A nitrogen-doped electrode (130) including polysilicon is located over the gate dielectric. The electrode has a concentration of nitrogen therein greater than the concentration of nitrogen in the source/drain regions.