MANUFACTURING METHOD OF THIN FILM OXIDE USING DOPANT

摘要

A method for manufacturing the film is provided to improve the reliability of semiconductor device by using the free cursor having the same ligand. The free cursor of the first substance is prepared. The free cursor of the second material having the same ligand as the first substance is prepared. The free cursor of the first substance and the free cursor of the second material are mixed to manufacture the thin film(12). The first substance and the second material can belong to the same family or the same cycle on the periodic table. The thin film can be formed by ALD or CVD.