| 摘要 |
PROBLEM TO BE SOLVED: To solve the following problems: a solid imaging device using an APD requires a high voltage, and it is extremely difficult to uniformize the characteristics of the APD in all pixels although the APD is sensitive to a temperature change, or manufacturing a solid imaging device using quantum dots is difficult. SOLUTION: A sensor section 1 includes an n-type source region 4, and a p-type charge concentration region 5 formed while surrounding the source region 4. A junction FET is formed with the source region 4, the charge concentration region 5, and n-type region 3 as a source, a gate, and a drain, respectively. An optical charge generated in a photoelectric conversion region 3 goes toward the charge concentration region 5 for storage, thus increasing current in the source region 4, and increasing a source voltage Vs. A current signal (source voltage) according to the number of optical charges is converted to a digital signal for storing into a memory, and then is outputted outside the pixels. COPYRIGHT: (C)2009,JPO&INPIT
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