发明名称 |
MOS TRANSISTORS FOR THIN SOI INTEGRATION AND METHODS FOR FABRICATING THE SAME |
摘要 |
MOS transistors for thin SOI integration and methods for fabricating such MOS transistors are provided. One exemplary method includes the steps of providing a silicon layer overlying a buried insulating layer and epitaxially growing a silicon-comprising material layer overlying the silicon layer. A trench is etched within the silicon-comprising material layer and exposing the silicon layer. An MOS transistor gate stack is formed within the trench. The MOS transistor gate stack comprises a gate insulator and a gate electrode. Ions of a conductivity-determining type are implanted within the silicon-comprising material layer using the gate stack as an implantation mask.
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申请公布号 |
US2009045458(A1) |
申请公布日期 |
2009.02.19 |
申请号 |
US20070838982 |
申请日期 |
2007.08.15 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
IACOPONI JOHN A.;MAITRA KINGSUK |
分类号 |
H01L29/786;H01L21/3205;H01L21/336 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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