发明名称 |
RESIST COMPOSITION FOR ELECTRON BEAM, X-RAY, OR EUV, AND PATTERN-FORMING METHOD USING THE SAME |
摘要 |
A positive resist composition for electron beam, X-ray or EUV includes (A) a compound represented by the following formula (I), and (B) a resin capable of decomposing by the action of an acid to increase solubility in an alkali developing solution, which includes a repeating unit represented by the following formula (II) and a repeating unit represented by the following formula (III):
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申请公布号 |
US2009047598(A1) |
申请公布日期 |
2009.02.19 |
申请号 |
US20080184313 |
申请日期 |
2008.08.01 |
申请人 |
FUJIFILM CORPORATION |
发明人 |
YAMASHITA KATSUHIRO;KAWANISHI YASUTOMO |
分类号 |
G03F7/004;G03F7/20 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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