发明名称 RESIST COMPOSITION FOR ELECTRON BEAM, X-RAY, OR EUV, AND PATTERN-FORMING METHOD USING THE SAME
摘要 A positive resist composition for electron beam, X-ray or EUV includes (A) a compound represented by the following formula (I), and (B) a resin capable of decomposing by the action of an acid to increase solubility in an alkali developing solution, which includes a repeating unit represented by the following formula (II) and a repeating unit represented by the following formula (III):
申请公布号 US2009047598(A1) 申请公布日期 2009.02.19
申请号 US20080184313 申请日期 2008.08.01
申请人 FUJIFILM CORPORATION 发明人 YAMASHITA KATSUHIRO;KAWANISHI YASUTOMO
分类号 G03F7/004;G03F7/20 主分类号 G03F7/004
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